AT-41411 Absolute Maximum Ratings
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2,3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum
[1]
1.5
20
12
50
225
150
-65 to 150
Thermal Resistance
[2,4]
:
θ
jc
= 550°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 1.8 mW/°C for T
C
> 26°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Part Number Ordering Information
Part Number
AT-41411-TR1
AT-41411-BLK
Increment
3000
100
Comments
Reel
Bulk
Note:
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
Electrical Specifications, T
A
= 25°C
Symbol
|S
21E
|
2
P
1 dB
G
1 dB
NF
O
Parameters and Test Conditions
[1]
Insertion Power Gain; V
CE
= 8 V, I
C
= 20 mA
Power Output @ 1 dB Gain Compression
V
CE
= 8 V, I
C
= 20 mA
1 dB Compressed Gain; V
CE
= 8 V, I
C
= 20 mA
Optimum Noise Figure: V
CE
= 8 V, I
C
= 10 mA
f = 1.0 GHz
f = 2.0 GHz
f = 2.0 GHz
f = 2.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
Units
dB
dBm
dB
dB
Min.
14.5
Typ. Max.
16.5
11.0
17.0
13.0
1.4
1.8
3.5
18.0
13.0
9.0
7.0
30
150
270
0.2
1.0
G
A
Gain @ NF
O
; V
CE
= 8 V, I
C
= 10 mA
dB
f
T
h
FE
I
CBO
I
EBO
Gain Bandwidth Product: V
CE
= 8 V, I
C
= 20 mA
Forward Current Transfer Ratio; V
CE
= 8 V, I
C
= 10 mA
Collector Cutoff Current; V
CB
= 8 V
Emitter Cutoff Current; V
EB
= 1 V
GHz
—
µA
µA
Notes:
1. Refer to PACKAGING Section, “Tape-and-Reel Packaging for Semiconductor Devices.”
4-110
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
