AT-32011, AT-32033 Absolute Maximum Ratings
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2, 3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum
[1]
1.5
11
5.5
32
200
150
-65 to 150
Thermal Resistance
[2]
:
θ
jc
= 550
°C/W
Notes:
1. Operation of this device above any one
of these parameters may cause permanent
damage.
2. T
Mounting Surface
= 25°C.
3. Derate at 1.82 mW/°C for T
C
> 40°C.
Electrical Specifications, T
A
= 25
°
C
AT-32011
Symbol
NF
G
A
h
FE
I
CBO
I
EBO
Parameters and Test Conditions
Noise Figure
V
CE
= 2.7 V, I
C
= 2 mA
Associated Gain
V
CE
= 2.7 V, I
C
= 2 mA
f = 0.9 GHz
f = 0.9 GHz
Units
dB
dB
–
µA
µA
12.5
[1]
70
Min.
Typ.
1.0
[1]
14
[1]
300
0.2
1.5
Max.
1.3
[1]
11
[2]
70
Min.
AT-32033
Typ.
1.0
[2]
12.5
[2]
300
0.2
1.5
Max.
1.3
[2]
Forward Current Transfer Ratio
V
CE
= 2.7 V, I
C
= 2 mA
Collector Cutoff Current
V
CB
= 3 V
Emitter Cutoff Current
V
EB
= 1 V
Notes:
1. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
2. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
1000 pF
V
BB
W = 10 L = 1870
W = 30
L = 60
W = 30
L = 60
V
CC
W = 10 L = 1870
1000 pF
CKT A: 25
Ω
CKT B: 5
Ω
RF OUT
RF IN
W = 10
CKT A: L = 380
CKT B: L = 380
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
CKT A: W = 30 L = 50 x 2
CKT B: W = 30 L = 60
W = 10
CKT A: L = 105
CKT B: L = 850
NOT TO SCALE
DIMENSIONS IN MILS
Figure 1. Test Circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain, stability, and a practical
synthesizable match.
4-54