ADA-4643 Absolute Maximum Ratings
[1]
Symbol
I
d
P
diss
P
in max.
T
j
T
STG
θ
jc
Parameter
Device Current
Total Power Dissipation
[2]
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance
[3]
Units
mA
mW
dBm
°C
°C
°C/W
Absolute
Maximum
70
270
18
150
-65 to 150
152
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Ground lead temperature is 25°C.
Derate 6.6 mW/°C for TL >109°C.
3. Junction-to-case thermal resistance
measured using 150°C Liquid Crystal
Measurement method.
ADA-4643 Electrical Specifications
T
A
= 25°C, Zo=50Ω, Pin = -25 dBm, I
d
= 35 mA (unless specified otherwise)
Symbol
V
d
Gp
∆Gp
F
3dB
VSMR
in
VSMR
out
NF
P
1dB
OIP
3
DV/dT
Parameter and Test Condition:
I
d
= 35 mA, Zo = 50Ω
Device Voltage I
d
= 35 mA
Power Gain (|S
21
|
2
Gain Flatness
3 dB Bandwidth
Input Voltage Standing Wave Ratio
Output Voltage Standing Wave Ratio
50Ω Noise Figure
Output Power at 1dB Gain Compression
Output 3
rd
Order Intercept Point
Device Voltage Temperature Coefficient
Frequency
Units
V
Min.
3.2
15.5
Typ.
3.5
17.5
17.0
0.5
1.8
3.2
2.0:1
1.6:1
Max.
3.9
18.5
Std. Dev.
100 MHz
900 MHz
[1,2]
100 to 900 MHz
0.1 to 2 GHz
dB
dB
GHz
0.1 to 6 GHz
0.1 to 6 GHz
100 MHz
900 MHz
[1,2]
100 MHz
900 MHz
[1,2]
100 MHz
[3]
900 MHz
[1,2,3]
dB
dBm
dBm
mV/°C
3.9
4.0
14.7
13.4
29.0
28.3
-5.3
0.07
0.1
Notes:
1. Typical value determined from a sample size of 500 parts from 3 wafers.
2. Measurement obtained using production test board described in the block diagram below.
3. I) 900 MHz OIP
3
test condition: F1 = 900 MHz, F2 = 905 MHz and Pin = -25 dBm per tone.
II) 100 MHz OIP
3
test condition: F1 = 100 MHz, F2 = 105 MHz and Pin = -25 dBm per tone.
Input
50 Ohm
Transmission
(0.5 dB loss)
DUT
50 Ohm
Transmission
including Bias
(0.5 dB loss)
Output
Block diagram of 900 MHz production test board used for V
d
, Gain, P
1dB
, OIP
3
, and NF measurements.
Circuit losses have been de-embedded from actual measurements.
2
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
