Electrical Specifications
T
c
= +25°C, Z
o
= 50
Ω,
P
in
= -30 dBm, V
cc
= 5V, Freq = 2 GHz, unless stated otherwise.
Symbol
Gp
∆Gp
NF
P1dB
50Ω
OIP3
VSWR
in
VSWR
out
Icc
Parameter and Test Condition
Power Gain (|S
21
| )
Power Gain Flatness,
Noise Figure
2
Units
dB
Min.
21
Typ.
23
23
0.5
3.0
3.6
4.4
18.0
16.1
35.0
27.8
1.20
1.11
1.20
1.14
Max.
25
Std Dev.
0.2
f = 200 MHz
f = 2.0 GHz
f = 0.1 ~ 2.0 GHz
f = 0.1 ~ 3.4 GHz
f = 200 MHz
f = 2.0 GHz
f = 200 MHz
f = 2. 0 GHz
f = 200 MHz
f = 2. 0 GHz
dB
dB
dBm
dBm
4.8
0.08
0.18
0.32
0.02
0.02
Output Power at 1dB Gain Compression
Output Third Order Intercept Point
Input VSWR
Output VSWR
Device Current
f = 200 MHz
f = 2.0 GHz
f = 200 MHz
f = 2.0 GHz
mA
79
90
0.2
Notes:
Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard deviation
and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal values anywhere
within the upper and lower spec limits.
3
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
