2
diodes. The leads on the Outline
15 package should be restricted
so that the bend starts at least 1/
16 inch (1.6 mm) from the glass
body. Typical package inductance
and capacitance are 2.5 nH and
0.13 pF, respectively. Marking is
by digital coding with a cathode
band.
Mechanical
Specifications
The Agilent Outline 15 package
has a glass hermetic seal with
dumet leads. The lead finish is 95-
5 tin-lead (SnPb) for all PIN
General Purpose Diodes
Electrical Specifications at TA = 25°C
Maximum
Total
Capacitance
CT (pF)
Minimum
Maximum
Part
Number
5082-
Breakdown Residual Series Effective Carrier Reverse Recovery
Voltage
VBR (V)
Resistance
Lifetime
Time
trr (ns)
RS (Ω)
τ (ns)
General Purpose Switching and Attenuating
3001
3039
1N5719
3077
0.25
0.25
0.3**
0.3
200
150
150
200
1.0
1.25
1.25
1.5
100 (min.)
100 (min.)
100 (min.)
100 (min.)
100 (typ.)
100 (typ.)
100 (typ.)
100 (typ)
Band Switching
3188
1.0*
35
0.6**
70 (typ.)*
IF = 50 mA
IR = 250 mA
*IF = 10 mA
*IR = 6 mA
12 (typ.)
IF = 20 mA
VR = 10 V
Test
Conditions
VR = 50 V
*VR = 20 V
VR = VBR
Measure
IR ≤ 10 µA
IF =100 mA
*IF = 20 mA
**IF = 10 mA
f = 100 MHz
**VR = 100 V
f = 1 MHz
90% Recovery
Notes:
Typical CW power switching capability for a shunt switch in a 50 Ω system is 2.5 W.
RF Current Controlled Resistor Diodes
Electrical Specifications at TA = 25°C
Max.
Max.
Residual
Series
High
Resistance
Low
Resistance
Difference
Effective
Carrier Breakdown
Lifetime
t (ns)
Min.
Max.
Total
in
Limit, RH (W) Limit, RL (W) Resistance
vs. Bias
Part
Voltage
Resistance Capacitance
RS (Ω)
Number
V
BR (V)
CT (pF)
Min.
Max. Min.
Max.
Slope, Dc
5082-3080
1N5767*
5082-3379
5082-3081
1300 (typ.)
1300 (typ.)
1300 (typ.)
2500 (typ.)
100
100
50
2.5
2.5
0.4
0.4
0.4
0.4
1000
1000
8**
8**
8**
8**
100
3.5
1500
Test
IF = 50 mA VR = VBR, IF = 100 mA VR = 50 V
IF = 0.01 mA
f = 100 MHz
IF = 1.0 mA
Batch
Conditions IR = 250 mA Measure f = 100 MHz f = 1 MHz
IF = 20 mA** Matched at
f = 100 MHz IF = 0.01 mA
and 1.0 mA
IR ≤ 10 µA
f = 100 MHz
*The 1N5767 has the additional specifications:
τ = 1.0 msec minimum
IR = 1 µA maximum at VR = 50 V
VF = 1 V maximum at IF = 100 mA.