4
Typical Parameters
100
10.000
1000
10
1,000
75
50
100°C
1
50°C
25°C
0°C
100
R
D
- DYNAMIC RESISTANCE (Ω)
I
F
- FORWARD CURRENT (mA)
100
I
R
(nA)
25
T
A
= 25°C
100
0.1
–50°C
10
0.01
0
0.10
0.20
0.30
0.40
0.50
0.60
1
0
5
V
BR
(V)
10
15
10
0.01
0
10
100
V
F
– FORWARD VOLTAGE (V)
I
F
- FORWARD CURRENT (mA)
Figure 1. I-V Curve Showing Typical
Temperature Variation for 5082-2300
Series and 5082-2900 Schottky Diodes.
1.2
Figure 2. 5082-2300 Series Typical
Reverse Current vs. Reverse Voltage
at Various Temperatures.
50
Figure 3. 5082-2300 Series and 5082-2900
Typical Dynamic Resistance (R
D
) vs.
Forward Current (I
F
).
100,000
150
125
100
1000
75
50
100
25
10
0
T
A
=
°C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
I
F
- FORWARD CURRENT (mA)
C
T
- CAPACITANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0
4
8
12
16
20
V
R
- REVERSE VOLTAGE (V)
5082-2900
5082-2303
10
5
1
0.5
+150°C
+100°C
+50°C
+25°C
0°C
–50°C
0.1
0.05
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
I
R
- REVERSE CURRENT (nA)
10,000
V
F
- FORWARD VOLTAGE (V)
V
R
- REVERSE VOLTAGE (V)
Figure 4. 5082-2300 and 5082-2900
Typical Capacitance vs. Reverse
Voltage.
Figure 5. I-V Curve Showing Typical
Temperature Variation for 5082-2800
or 1N5711 Schottky Diodes.
Figure 6. (5082-2800 OR 1N5711)
Typical Variation of Reverse Current
(I
R
) vs. Reverse Voltage (V
R
) at
Various Temperatures.
10,000
12.0
100
I
F
- FORWARD CURRENT (mA)
1.5
10
I
R
- REVERSE CURRENT (nA)
C
T
- CAPACITANCE (pF)
150
125
1000
100
75
100
50
25
10
T
A
=
°C
1.0
1.0
+150°C
+100°C
+50°C
0.5
0.1
+25°C
0°C
–50°C
0
0
10
20
30
40
50
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.0
0
5
10
15
20
25
30
V
R
- REVERSE VOLTAGE (V)
V
F
- FORWARD VOLTAGE (V)
V
R
- REVERSE VOLTAGE (V)
Figure 7. (5082-2800 or 1N5711)
Typical Capacitance (C
T
) vs. Reverse
Voltage (V
R
).
Figure 8. I-V Curve Showing Typical
Temperature Variation for the 5082-
2810 or 1N5712 Schottky Diode.
Figure 9. (5082-2810 or IN5712)
Typical Variation of Reverse Current
(I
R
) vs. Reverse Voltage (V
R
) at
Various Temperatures.
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
