[1]
DC Specifications/Physical Properties
Symbol
Parameters/Conditions
Min.
Typ.
Max.
Units
Forward Voltage @ 1 mA
Vfwd
5.3
1
V
RF In/Out Pad to Gnd Pad of Diode Stack
Rthru
DC Through Resistance
Ω
Notes:
1. Measured on wafer with Tchuck = 25°C unless otherwise noted.
[1]
RF Specializations
Symbol
Parameters/Conditions
Min.
Typ.
Max.
Units
3 GHz
13.5 GHz
0.3
1.0
IL
Insertion Loss
dB
3 GHz
23
15
RL
Return Loss (S11 + S22)
dBm
dBm
dBm
dBm
dBm
13.5 GHz
3 GHz
13.5 GHz
26
25
P–1dB
SHI
THI
Incident Power @ 1 dB Gain Compression
Second Harmonic Intercept
Third Harmonic Intercept
3 GHz
13.5 GHz
>100
>100
3 GHz
13.5 GHz
50
43
3 GHz
13.5 GHz
49
43
TOI
Third Order Intercept
Notes:
1. Measured on wafer with Tchuck = 25°C. Numbers shown are over 0–50 GHz band unless otherwise specified.
Notes:
GND
16
GND
15
GND
14
GND
13
Discrete MIM chip ca-
pacitors are connected
to the shunt diode
stacks of the input lim-
iter MMIC to allow DC
offsets of the RFIN
pins.
GND
RFIN
GND
GND
1
2
3
4
12
11
10
9
GND
RFOUT
GND
Dual RF Input Pins (4,5)
and RF Output Pins
(20,21) enable better
matched transition to
wide 50? trace widths
typically used in PCB
implementations.
GND
TC626
TOP
GND1
VIEW
17
5
6
7
8
GND
GND
GND
GND
Figure 1. TC626P Schematic
2
TC626P/rev.3.0
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
