1
DC specifications/physical properties
Symbol
Parameters/conditions
Minimum
Typical
Maximum
Units
Vfwd_A
Vfwd_C
Limiting Diode Forward Voltage @ 0.1 mA
0.5
0.64
0.8
V
Vfwd_D
2-Diode Bias Stack Forward Voltage @0.1 mA
0.8
5
1.15
12
1.5
20
V
R
R
Limiting Diode Series Resistance @ 15mA
Including 2 ohm Resistor
Ω
S_A
S_C
I ,I
Limiting Diode Reverse Leakeage Current @-1V
Through Series Resistance
0.1
1.2
1.2
5.5
uA
A C
R
Ω
S_Series
Notes:
1 Measured on wafer with Tchuck = 25°C unless otherwise noted.
1
RF specifications
Symbol
S11,S22
S21,S12
∆τd
Parameters/conditions
Relection
Minimum
Typical
-24
Maximum
Units
dB
10 GHz
10 GHz
26.5 GHz
-20
Through Loss
-0.4
-0.2
dB
Group Delay Flatness
1 dB Gain Compression
±0.5
pS
P-1dB
A&C Grounded
DGND Grounded
A&C Biased
10
18
dBm
Voltage Variable
SHI
Second Harmonic Intercept
Third Harmonic Intercept
Third Order Intercept
f =5 GHz, A&C or
70
32
32
dBm
dBm
dBm
0
DGND Grounded
THI
f =5 GHz, A&C or
0
DGND Grounded
TOI
f1=5 GHz, f2=5.25 GHz,
A&C or DGND Grounded
Notes:
1 Measured on wafer with Tchuck = 25°C unless otherwise noted.
1
ESD Specifications
Symbol
Parameters/conditions
Minimum
Typical
Maximum
Units
ESD
ESD No Damage
A&C Grounded
DGND Grounded
2400
2800
V
Notes:
1 Using Human Body Model as ESD generator. Circuit equivalent is 100 pF, 1500Ω
2
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