[1]
DC Specifications/Physical Properties
Symbol
Parameters/Conditions
Min.
Typ.
Max.
Units
Vfwd_A,
Vfwd_C
Limiting Diode Forward Voltage @ 0.1 mA
0.6
1
0.64
1.15
12
0.7
1.3
17
1
V
V
Vfwd_D
2–Diode Bias Stack Forward Voltage @ 0.1 mA
Rs_A,
Rs_C
Limiting Diode Series Resistance @ 15 mA
Including 2–ohm Resistor
7
Ω
I_A, I_C
Limiting Diode Reverse Leakage Current @ –1V
Through Series Resistance
0.1
1.2
uA
RS_Series
Ω
Notes:
1. Measured on wafer with Tchuck = 25°C, unless otherwise noted.
[1]
RF Specifications
Symbol Parameters/Conditions
Min.
Typ.
Max.
Units
10 GHz
30 GHz
50 GHz
65 GHz
10 GHz
30 GHz
50 GHz
65 GHz
–24
–20
–12
–10
–0.2
–0.3
–1.3
–2
–20
–15
–8
S11,S22
Reflection
dB
–0.4
–0.75
–1.7
S21,S12
Through Loss
dB
26.5 GHz
50 GHz
65 GHz
±0.5
±0.75
±1.0
10
Group Delay Flatness
pS
∆τ
d
A&C Grounded
DGND Grounded
A&C Biased
ƒ0 = 5 GHz, A & C or
DGND Grounded
ƒ0 = 5 GHz, A&C or
DGND Grounded
P–1dB
1 dB Gain Compression
18
dBm
Voltage Variable
SHI
THI
Second Harmonic Intercept
Third Harmonic Intercept
Third Order Intercept
70
dBm
dBm
dBm
32
32
ƒ1 = 5 GHz, ƒ2 = 5.25 GHz,
A&C or DGND Grounded
TOI
Notes:
1. Measured on wafer with Tchuck = 25°C. Numbers shown are over 0–50 GHz band unless otherwise specified.
[1]
ESD Specifications
Symbol
Parameters/Conditions
Min.
Typ.
Max.
Units
ESD
ESD No Damage
A&C Grounded
2400
2800
V
V
DGND Grounded
Notes:
1. Using Human Body Model as ESD generator. Circuit equivalent is 100 pF, 1500Ω.
2
TC231/rev.3.0
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
