The device should be mounted
using epoxy or solder to a metal
case with thermal conductivity
equal to, or better than, alumi-
num, and the case temperature
should not exceed 85°C. This will
keep the diode junctions at or be-
low 130°C for an input power of
22 dBm, and will keep the recti-
fied diode currents well within
acceptable limits for reliable op-
eration.
stage temperature should be 150
± 2°C, and ultrasonic power and
duration should be 64 ± 1 dB
and 76 ± 8 msec, respectively.
The bonding pad and chip back-
side metallization is gold.
Applications
The TC221 frequency doubler is
designed for use in microwave
instrumentation source applica-
tions.
Operation
GaAs MMICs are ESD sensitive.
ESD preventive measures must
be employed in all aspects of
storage, handling, and assembly.
The TC221 is a passive diode dou-
bler, with "+" and "−" DC bias pads
included to optimize performance
at low input power levels. Bias
can be applied through either the
"+" or "−" bias pad or both, with the
other pad either grounded or
open. The optimum bias will de-
pend on frequency and input pow-
er level, and must be empirically
optimized for each application.
MMIC ESD precautions, handling
considerations, die attach and
bonding methods are critical fac-
tors in successful GaAs MMIC
performance and reliability.
Assembly Techniques
Epoxy die–attach using conduc-
tive epoxy or solder die–attach
using a fluxless AuSu solder pre-
form can be used for assembly.
Gold thermosonic wedge bond-
ing with 0.7 mil diameter Au wire
is recommended for all bonds.
Tool force should be 22 ± 1 gram,
Agilent application note #54,
"GaAs MMIC ESD, Die Attach and
Bonding Guidelines" provides ba-
sic information on these subjects.
DC blocking capacitors have been
included at the input and output
of the device for ease of interface
to other devices.
Figure 16.
TC221 Simplified Schematic
TC221/rev.3.0
5
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