1.3
µ
m D2300-Type Digital
Isolated DFB Laser Module
Data Sheet
February 2000
Characteristics
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are
the result of engineering evaluations. Typical values are for information purposes only and are not part of the test-
ing requirements.
Table 1. Electrical Characteristics (at 25
°
C Laser Temperature)
Parameter
Laser Forward Voltage
Slope Efficiency
Threshold Current
Monitor Reverse-bias Voltage*
Monitor Current
Monitor Dark Current
Input Impedance
Thermistor Current
Resistance Ratio
†
Thermistor Resistance
TEC Current
TEC Voltage
TEC Capacity
Symbol
V
LF
η
I
TH
V
RMON
I
RMON
I
D
Z
IN
I
TC
—
R
TH
I
TEC
V
TEC
∆T
Test Conditions
L
F
= 2 mW (CW)
L
F
= 2 mW (CW)
—
—
P
O
= 1 mW (CW)
I
F
= 0, V
RMON
= 5 V
—
—
—
T
L
= 25
°
C
T
L
= 25
°
C, T
C
= 70
°
C
T
L
= 25
°
C, T
C
= 70
°
C
T
C
= 80
°
C
Min
—
0.025
—
3
0.1
—
—
10
8.6
9.5
—
—
55
Typ
1.3
0.06
15
5
1.0
0.01
25
—
—
—
—
—
—
Max
1.8
—
50
10
2.0
0.1
—
100
9.6
10.5
1.0
2.0
—
Unit
V
mW/mA
mA
V
mA
µ
A
Ω
µ
A
—
k
Ω
A
V
°
C
* Standard operating condition is 5.0 V reverse bias.
† Ratio of thermistor resistance at 0
°
C to thermistor resistance at 50
°
C.
Table 2. Optical Characteristics (at 25
°
C Laser Temperature)
Parameter
Peak Optical Output Power
Center Wavelength
Spectral Width:
Full Width at –3 dB
Full Width at –20 dB
Side-mode Suppression Ratio
Optical Isolation
Symbol
P
PEAK
λ
C
∆λ
Test Conditions
—
—
Modulated at 2.5 Gbits/s at
rated power
Modulated at 2.5 Gbits/s
0
°C
to 65
°C
Min
2.0
1290
—
—
30
30
Typ
—
1310
0.20
0.8
—
—
Max
—
1330
0.30
1.0
—
—
Unit
mW
nm
nm
nm
dB
dB
SMSR
—
4
Lucent Technologies Inc.