D1861D050 参数 Datasheet PDF下载

D1861A 10 Gbits/s 1310 nm DML Module (10 dBm)

Preliminary Data Sheet

March 2001

Absolute Maximum Ratings

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso-

lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess

of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended

periods can adversely affect device reliability. RF input shall be ac coupled. It is recommended that a series induc-

tor of 100

µ

H be placed external to the device on Pin 3.

Parameter

Operating Temperature Range

Storage Case Temperature Range

Laser Forward Bias

Pin 3, Max Positive Voltage

1

Pin 3, Max Positive Current

1

Reverse Voltage Photodiode

TEC Current

1. RF connector ac coupled.

Symbol

T

OP

Tstg

—

V

R

I

R

V

RPD

I

TEC

Condition

—

—

TEC On

—

—

—

—

Min

–40

–40

—

—

—

—

—

Max

80

85

150

1

200

20

1.7

Unit

°C

°C

mA

V

mA

V

A

Electrical/Optical Characteristics

Table 2. Electrical and Optical Characteristics

(Case temperature, –5 °C to +80 °C; laser temperature, 25 °C

unless otherwise noted.)

Parameter

Average Optical Output Power

Threshold Current (BOL)

Wavelength

Wavelength Tuning Coefficient

External Efficiency

ac Side-mode Suppression Ratio

Chromatic Dispersion Penalty

(50 km, SMF28, 200 ps/nm)

Optical Isolation

High-frequency Cutoff (3 dB)

Low-frequency Cutoff (3 dB)

RF Return Loss, 50

Ω

(0.1 GHz—8 GHz)

Rise/Fall Time, 10%—90%

Thermoelectric Cooler Current

Thermistor Resistance

Thermistor Coefficient

Monitor Photodiode Current

Symbol

P

O

I

TH

λ

∆λ

T

η

SMSR

—

—

F

HIGH

F

LOW

IS

11

I

t

R

/t

F

I

TEC

R

TH

—

I

MPD

Condition

I

OP

≈

I

TH

+ 30 mA

—

—

—

—

I

OP

—

1

—

I

OP

2

I

OP

2

I

OP

—

1

—

—

—

I

OP

Min

7

2

1290

—

0.24

35

—

32

14

—

10

—

—

9.5

—

40

Typ

—

—

—

0.085

—

—

—

—

—

—

—

—

—

10

–4.4

—

Max

—

30

1320

—

—

—

1.0

—

—

30

—

50

1.3

10.5

—

1500

Unit

mW

mA

nm

nm/°C

W/A

dB

dB

dB

GHz

kHz

dB

ps

A

kΩ

%/°C

µA

1. 10 Gbits/s PRBS 2

23

–1, E

R

= 8.2 dB, @ I

OP

T

OP

= 25 °C, typical 50 mAp–p drive current.

,

2. Measurements made with 100

µH

in series with pin 3 (laser cathode).

2

Agere Systems Inc.