ACT–SF512K16 High Speed
512Kx16 SRAM/FLASH Multichip Module
CIRCUIT TECHNOLOGY
www.aeroflex.com
FEATURES
■ 2 – 512K x 8 SRAMs & 2 – 512K x 8 Flash Die in
One MCM
■ Access Times of 25ns (SRAM) and 60ns (Flash) or
35ns (SRAM) and 70 or 90ns (Flash)
■ 512K x 16 SRAM
■ 512K x 16 5V Flash
■ Organized as 512K x 16 of SRAM and 512K x 16 of
■ Packaging – Hermetic Ceramic
● 66 Pin, 1.08" x 1.08" x .160" PGA Type, No Shoulder,
Aeroflex code# "P3"
● 66 Pin, 1.08" x 1.08" x .185" PGA Type, With
Shoulder, Aeroflex code# "P7"
● 68 Lead, .94" x .94" x .140" Single-Cavity Small
Outline Gull Wing, Aeroflex code# "F18" (Drops into
the 68 Lead JEDEC .99"SQ CQFJ footprint)
Flash Memory with Separate Data Buses
■ DESC SMD Pending – 5962-96901
■ Both Blocks of Memory are User Configurable as
1M x 8
■ Low Power CMOS
■ Input and Output TTL Compatible Design
■ MIL-PRF-38534 Compliant MCMs Available
■ Decoupling Capacitors and Multiple Grounds for Low
Noise
■ Industrial and Military Temperature Ranges
■ Industry Standard Pinouts
FLASH MEMORY FEATURES
■ Sector Architecture (Each Die)
● 8 Equal Sectors of 64K bytes each
● Any combination of sectors can be erased with one
command sequence.
■ +5V Programing, 5V ±10% Supply
■ Embedded Erase and Program Algorithms
■ Hardware and Software Write Protection
■ Internal Program Control Time.
Note: Programming information available upon request
■ 10,000 Erase / Program Cycles
Block Diagram – PGA Type Packages (P3 & P7) & CQFP (F18)
Pin Description
SWE1 SCE1 SWE2 SCE2 FWE1 FCE1 FWE2 FCE2
FI/O0-15
Flash Data I/O
SRAM Data I/O
Address Inputs
OE
A0 – A18
SI/O0-15
A0–18
512Kx8
SRAM
512Kx8
SRAM
512Kx8
Flash
512Kx8
Flash
FWE1-2 Flash Write Enables
SWE1-2 SRAM Write Enables
FCE1-2 Flash Chip Enables
SCE1-2 SRAM Chip Enables
8
8
8
8
SI/O0-7
SI/O8-15
FI/O0-7
FI/O8-15
OE
NC
Output Enable
Not Connected
Power Supply
Ground
VCC
GND
eroflex Circuit Technology - Advanced Multichip Modules © SCD1663 REV A 4/28/98
AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
