A3RS91.1
High Power Chip Termination
100 Watts
When properly mounted on an appropriate heat sink, this chip
device provides high power dissipation capabilities. Ideal
for ferrite isolator applications, the improved thin film design
technology and laser trimming provide proven RF power
capabilities to meet the demands of today's CDMA and
WCDMA system requirements. Aluminum Nitride is featured
for those applications where the use and disposal of Beryllium
oxide is a concern.
•
Environmentally friendly AlN substrate
•
Hi-performance, thin film element
•
Power Handling of 100 Watts
•
New adhesion process results in improved
terminal strength
•
On-chip matching network improves frequency
performance over the DC-3 GHz frequency range
RoHS
SPECIFICATIONS
Parameters
Frequency Range
Power
VSWR
Resistance
Operating Temperature
Substrate
Specifications
DC to 3 GHz
100 Watts*
1.10:1 max
50 ohms +/- 5%
-55
°C
to 1
°C
50
Aluminum Nitride
PHYSICAL DIMENSIONS
.225 REF
[5,72] REF
.045
[1,14]
.350REF
[8,89]REF
* Refer to average power derating curve chart.
TYPICAL PERFORMANCE
A3RS91.1
.050
[1,27]
.040 REF
[1,02]
WRAP AROUND
AVERAGE POWER DERATING CURVE
100
% OF RATED POWER
75
50
25
0
25
50
75
100
125
150
CHIP BASE TEMP ˚C
KEY:
Inches [Millimeters] .XX ±.03 .XXX ±.010 [.X ±0.8 .XX ±0.25]
60 South Jefferson Road, Whippany, NJ 07981
Tel: 973-887-8100
•
Fax: 973-560-1372
www.aeroflex.com/kdi-resistor
•
kdi-resistor-sales@aeroflex.com
KDI-RESISTOR PRODUCTS
REV 3/09
AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
