P
total1
Power dissipation
5,7, 8
C
L
= 50pF
V
DD
from 4.5 to 5.5
2.0
mW/
MHz
mW/
MHz
P
total2
Power dissipation
5, 7, 8
C
L
= 50pF
V
DD
from 3.00 to 3.6
1.5
I
DD
Standby Supply Current V
DD1
or V
DD2
V
IN
= V
DD
or V
SS
V
DD
= 5.5
Pre-Rad 25
o
C
Pre-Rad -55
o
C to +125
o
C
Post-Rad 25
o
C
C
IN
Input capacitance
9
OE=V
DD
OE=V
DD
OE=V
DD
ƒ
= 1MHz @ 0V
V
DD
from 3.00 to 5.5
10
100
500
15
µA
µA
µA
pF
C
OUT
Output capacitance
9
ƒ
= 1MHz @ 0V
V
DD
from 3.00 to 5.5
15
pF
Notes:
1. All specifications valid for radiation dose
≤
1E5 rad(Si) per MIL-STD-883, Method 1019.
2. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%,
- 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within th e above specified range, but
are guaranteed to V
IH
(min) and V
IL
(max).
3. All combinations of OEx and DIRx
4. Per MIL-PRF-38535, for current density
≤
5.0E5 amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed
3,765 pF-MHz.
5. Guaranteed by characterization.
6. Not more than one output may be shorted at a time for maximum duration of one second.
7. Power does not include power contribution of any CMOS output sink current.
8. Power dissipation specified per switching output.
9.Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at frequency of 1MHz and a signal amplitude of 50mV rms maximum.
1 0 .Guaranteed; tested on a sample of pins per device.
11. Supplied as a design limit, but not guaranteed or tested.
.
6
AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
