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5962-0151101 参数 Datasheet PDF下载

5962-0151101图片预览
型号: 5962-0151101
PDF下载: 下载PDF文件 查看货源
内容描述: UT9Q512K32 16Megabit SRAM MCM [UT9Q512K32 16Megabit SRAM MCM]
分类和应用: 静态存储器
文件页数/大小: 14 页 / 138 K
品牌: AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
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AC CHARACTERISTICS READ CYCLE (Pre/Post-Radiation)*
(-40°C to +125°C) (V
DD
= 5.0V + 10%)
SYMBOL
t
AVAV 1
t
AVQV
t
AXQX 2
t
GLQX 2
t
GLQV
t
GHQZ 2
t
ETQX 2,3
t
ETQV 3
t
EFQZ 1 ,2 ,4
Read cycle time
Read access time
Output hold time
G-controlled Output Enable time
G-controlled Output Enable time (Read Cycle 3)
G-controlled output three-state time
En-controlled Output Enable time
En-controlled access time
En-controlled output three-state time
3
25
10
3
3
10
10
PARAMETER
MIN
25
25
MAX
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
* Post-radiation performance guaranteed at 25
°C
per MIL-STD-883 Method 1019.
1. Functional test.
2. Three-state is defined as a 500mV change from steady-state output voltage.
3. The ET (enable true) notation refers to the falling edge of En. SEU immunity does not affect the read parameters.
4. The EF (enable false) notation refers to the rising edge of En. SEU immunity does not affect the read parameters.
High Z to Active Levels
Active to High Z Levels
V
LOAD
+ 500mV
}
V
LOAD
{
{
}
V
LOAD
- 500mV
V
H
- 500mV
V
L
+ 500mV
Figure 3. 5-Volt SRAM Loading
6