AEGIS
SEMICONDUTORES LTDA.
A1A:460.XX
VOLTAGE RATINGS
Part Number
V
RRM
, V
R
– (V)
rep. peak reverse voltage
C
T
J
= 0 to 180
O
A1A:460.02
A1A:460.04
A1A:460.06
A1A:460.08
A1A:460.10
A1A:460.12
A1A:460.14
A1A:460.16
200
400
600
800
1000
1200
1400
1600
Max. V
RSM
, V
R
– (V) Max. non-
rep. peak reverse voltage
O
This datasheet applies to:
Metric thread: A1A:460.XX,
A1B:460.XX
Inch thread: A2A:460.XX,
A2B:460.XX
T
J
= -40 to 0 C
200
400
600
800
1000
1200
1400
1600
T
J
= 25 to 180 C
300
500
700
900
1100
1300
1500
1700
O
MAXIMUM ALLOWABLE RATINGS
PARAMETER
T
J
Junction Temperature
T
stg
Storage Temperature
I
F(AV)
Max. Av. current
@ Max. T
C
VALUE
-40 to 180
-40 to 180
460
125
940
10900
I
FSM
Max. Peak non-rep. surge
current
11450
A
13000
13600
598
I
2
t Max. I
2
t capability
546
845
772
I
2
t
1/2
Max. I
2
t
1/2
capability
F Mounting Force
8450
60(534)
kA
2
s
1/2
N.m(Lbf.in)
kA
2
s
50 Hz half cycle sine wave
60 Hz half cycle sine wave
t = 10ms
t = 8.3 ms
t = 10ms
Initial T
J
= 180 C, no voltage
applied after surge.
O
UNITS
O
O
NOTES
-
-
O
180 half sine wave
C
C
C
A
O
I
F(RMS)
Nom. RMS current
A
50 Hz half cycle sine wave
60 Hz half cycle sine wave
-
Initial T
J
= 180
O
C, rated V
RRM
applied after surge.
Initial T
J
= 180
O
C, no voltage
applied after surge.
Initial T
J
= 180
O
C, rated V
RRM
applied after surge.
t = 8.3 ms
O
Initial T
J
= 180 C, no voltage applied after surge.
I
2
t for time t
x
= I
2
t
1/2
* t
x1/2
. (0.1 < tx < 10ms).
-
AEGIS [ AEGIS SEMICONDUTORES LTDA ]
