欢迎访问ic37.com |
会员登录 免费注册
发布采购

SD197-23-21-041 参数 Datasheet PDF下载

SD197-23-21-041图片预览
型号: SD197-23-21-041
PDF下载: 下载PDF文件 查看货源
内容描述: 红四增强细胞硅光电二极管 [Red Enhanced Quad Cell Silicon Photodiode]
分类和应用: 光电二极管光电二极管
文件页数/大小: 1 页 / 113 K
品牌: ADVANCEDPHOTONIX [ ADVANCED PHOTONIX, INC. ]
   
Red Enhanced Quad Cell Silicon Photodiode  
SD 197-23-21-041  
PACKAGE DIMENSIONS INCH [mm]  
.180 [4.57]  
.170 [4.32]  
CHIP PERIMETER  
45°  
Ø.505 [12.83]  
Ø.495 [12.57]  
.075 [1.91]  
5X Ø.018 [0.46]  
.075 [1.90]  
.150 [3.81]  
Ø.380 [9.65]  
Ø.370 [9.40]  
5
4
1
82°  
C
D
B
A
VIEWING  
ANGLE  
Ø.455 [11.56]  
Ø.445 [11.30]  
2
3
.010 [0.25] MAX  
5X .510 [12.95]  
A
.150 [3.81]  
GLASS ABOVE CAP TOP EDGE  
.300 [7.62]  
4
CHIP DIMENSIONS INCH [mm]  
B
C
D
.230 [5.84] SQUARE  
5
1
3
Ø.196 [4.98]  
ACTIVE AREA  
2
C
B
SCHEMATIC  
D
A
.0012 [0.030] GAP  
TO-8 PACKAGE  
.0012 [0.030] GAP  
FEATURES  
DESCRIPTION  
APPLICATIONS  
Low noise  
The SD 197-23-21-041 is a red enhanced quad-cell  
silicon photodiode used for nulling, centering, or  
measuring small positional changes packaged in a  
hermetic TO-8 metal package.  
• Emitter Alignment  
• Position sensing  
• Medical and Industrial  
• Red enhanced  
• High shunt resistance  
• High response  
SPECTRAL RESPONSE  
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
0.70  
0.60  
0.50  
0.40  
0.30  
0.20  
0.10  
0.00  
SYMBOL  
VBR  
PARAMETER  
MIN  
MAX  
50  
UNITS  
Reverse Voltage  
V
TSTG  
TO  
Storage Temperature  
Operating Temperature  
Soldering Temperature*  
-55  
-40  
+150  
+125  
+240  
°C  
°C  
°C  
TS  
* 1/16 inch from case for 3 seconds max.  
Wavelength (nm)  
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
SYMBOL  
CHARACTERISTIC  
Dark Current  
TEST CONDITIONS  
VR = 5 V  
MIN  
TYP  
MAX  
UNITS  
nA  
ID  
1.4  
7.5  
MW  
RSH  
Shunt Resistance  
VR = 10 mV  
175  
VR = 0 V, f = 1 MHz  
VR = 5 V, f = 1 MHz  
Spot Scan  
100  
20  
CJ  
Junction Capacitance  
Spectral Application Range  
Responsivity  
pF  
lrange  
350  
1100  
nm  
A/W  
l= 633nm, VR = 0 V  
l= 900nm, VR = 0 V  
I = 10 μA  
VR = 0V @ l=950nm  
RL = 50 ,VR = 0 V  
RL = 50 ,VR = 10 V  
0.32  
0.50  
0.36  
0.55  
50  
2.5x10-14  
190  
R
VBR  
Breakdown Voltage  
V
NEP  
Noise Equivalent Power  
W/ Hz  
tr  
Response Time**  
nS  
13  
**Response time of 10% to 90% is specified at 660nm wavelength light.  
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are  
subject to change without notice.  
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com  
REV 4/19/06