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SD100-14-21-021 参数 Datasheet PDF下载

SD100-14-21-021图片预览
型号: SD100-14-21-021
PDF下载: 下载PDF文件 查看货源
内容描述: 红色的增强型高性能硅光电二极管 [Red Enhanced High Performance Silicon Photodiode]
分类和应用: 光电二极管光电二极管
文件页数/大小: 1 页 / 99 K
品牌: ADVANCEDPHOTONIX [ ADVANCED PHOTONIX, INC. ]
   
Red Enhanced High Performance Silicon Photodiode  
SD 100-14-21-021  
PACKAGE DIMENSIONS INCH [mm]  
.169 [4.29]  
.157 [3.99]  
45°  
.075 [1.91]  
3X Ø.018 [0.46]  
Ø.200 [5.08]  
1
Ø.264 [6.70]  
Ø.256 [6.50]  
PIN CIRCLE  
82°  
VIEWING  
ANGLE  
2
Ø.330 [8.38]  
Ø.320 [8.13]  
3
Ø .362 [9.19]  
Ø .357 [9.07]  
.010 [0.25] MAX  
GLASS ABOVE CAP  
TOP EDGE  
3X .500 [12.7] MIN  
1 ANODE  
CHIP DIMENSIONS INCH [mm]  
3 NOT USED  
2 CATHODE/ CASE GROUND  
SCHEMATIC  
.118 [3.00]  
SQUARE  
Ø.100 [Ø2.54]  
ACTIVE AREA  
TO-5 PACKAGE  
FEATURES  
DESCRIPTION  
APPLICATIONS  
Low noise  
The SD 100-14-21-021 is a high performance silicon  
PIN photodiode, red enhanced, packaged in a leaded  
hermetic TO-5 metal package.  
• Instrumentation  
• Industrial  
• Medical  
• Red enhanced  
• High shunt resistance  
• High response  
SPECTRAL RESPONSE  
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
0.70  
0.60  
0.50  
0.40  
0.30  
0.20  
0.10  
0.00  
SYMBOL  
VBR  
PARAMETER  
MIN  
MAX  
75  
UNITS  
Reverse Voltage  
V
TSTG  
TO  
Storage Temperature  
Operating Temperature  
Soldering Temperature*  
-55  
-40  
+150  
+125  
+240  
°C  
°C  
°C  
TS  
* 1/16 inch from case for 3 seconds max.  
Wavelength (nm)  
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
SYMBOL  
CHARACTERISTIC  
Dark Current  
TEST CONDITIONS  
MIN  
TYP  
MAX UNITS  
ID  
VR = 5V  
0.3  
1.6  
nA  
MW  
RSH  
Shunt Resistance  
VR = 10 mV  
600  
VR = 0V, f = 1 MHz  
VR = 5V, f = 1 MHz  
Spot Scan  
87  
26  
CJ  
Junction Capacitance  
pF  
lrange  
Spectral Application Range  
350  
1100  
nm  
l= 633nm, VR = 0 V  
l= 900nm, VR = 0 V  
I = 10 μA  
VR = 5V @ l=950nm  
RL = 50 ,VR = 0 V  
RL = 50 ,VR = 10 V  
0.32  
0.50  
0.36  
R
Responsivity  
A/W  
0.55  
50  
1.8X10-14  
190  
VBR  
Breakdown Voltage  
V
NEP  
Noise Equivalent Power  
W/ Hz  
tr  
Response Time**  
nS  
13  
**Response time of 10% to 90% is specified at 660nm wavelength light.  
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are  
subject to change without notice.  
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com