UV Enhanced GaN Detectors
PDU-G101A
Advanced Photonix, Inc.
PACKAGE DIMENSIONS INCH [mm]
Ø.210 [5.35]
.055 [1.40]
2X Ø.017
[0.43]
Ø .118 [3.00]
CATHODE
VIEWING
ANGLE
61°
ANODE
.100 [2.54]
.500
[12.70]
Ø.181 [4.60]
.087 [2.21]
CHIP
CHIP DIMENSIONS INCH [mm]
.016 [0.40] SQ
TO-46 PACKAGE
.0134 [0.340]
ACTIVE AREA = 0.076 mm ²
.0126 [0.320]
FEATURES
DESCRIPTION
APPLICATIONS
• UVB power meters
• Sun dosimeters
• UV epoxy curing
• UV instrumentation
• 365nm UVB response
• Visible & NIR blind
The PDU-G101A is a GaN UV photodiode with a
spectral range from 200nm to 365nm and is ideal for
UVB sensing applications available in a TO-46 can
package.
• Photovoltaic operation
• High shunt resistance
SPECTRAL RESPONSE
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED 1.000
0.100
0.010
0.001
0.000
SYMBOL
VBR
PARAMETER
MIN
MAX UNITS
Reverse Voltage
5
V
TSTG
TO
Storage Temperature
Operating Temperature
Soldering Temperature*
-40
-30
+90
+85
+260
°C
°C
°C
TS
* 1/16 inch from case for 3 seconds max.
Wavelength (nm)
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ISC
ID
RSH
CJ
lrange
R
VBR
NEP
tr
Short Circuit Current
Dark Current
Shunt Resistance
Junction Capacitance
Spectral Application Range
Responsivity
Breakdown Voltage
Noise Equivalent Power
Response Time
UVI = 1
VR = 1V
VR = 10 mV
VR = 0V, f = 1 MHz
Spot Scan
l= 350nm V, VR = 0 V
I = 1μA
VR = 10V @ l=Peak
RL = 1KΩ,VR = 1V
1
0.05
1
nA
nA
GW
pF
nm
A/W
V
1
0.45
200
24
365
15
0.10
10
1X10-13
10
W/ √ Hz
nS
© 2007 Advanced Photonix, Inc. All rights reserved. Specifications and output data subject to change without notice.
Advanced Photonix, Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com
REV 4/19/07
ADVANCEDPHOTONIX [ ADVANCED PHOTONIX, INC. ]