GaAlAs High power IR LED Emitters
(660nm/880nm) PDI-E838
.167 [4.24]
PACKAGE DIMENSIONS INCH [mm]
C
L
.104 [2.64]
C
.055 [1.40]
L
.063 [1.60]
.060 [1.52]
RED L.E.D. CHIP
.025 [0.64]
I.R. L.E.D. CHIP
C
L
METALIZED
CERAMIC
WIRE BONDS
.250 [6.35]
ENCAPSOLATE
CONTACT B
CONTACT A
Metalized Ceramic Package
FEATURES
• Low Cost
• 660 nm +/- 3nm
• 2 drive line
DESCRIPTION
APPLICATIONS
The PDI-E838 is a two drive line dual emitter
oximeter component. The 660 and 880 nm GaAlAs
infrared emitters are mounted in a glob toped low
cost ceramic SMT package. The LEDs are bias
separately by alternating polarity on the bias pins.
• Oximeter Probes
• Finger Clamps
• Reusable probes
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED SCHEMATIC
A
SYMBOL PARAMETER
MIN
MAX
250
30
UNITS
mW
mA
Pd
If
Power Dissipation
Continuous Forward Current
Peak Forward Current
Reverse Voltage
Ip
200
4
mA
880 nm
LED
660 nm
LED
Vr
V
TSTG
TO
Storage Temperature
Operating Temperature
Soldering Temperature*
-40
-40
+80
+80
+240
°C
°C
B
°C
TS
* 1/16 inch from case for 3 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED 660 nm
880 nm
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
UNITS
MIN TYP MAX MIN TYP MAX
Po
Iv
Vf
Radiant Flux
Luminous Intensity
Forward Voltage
If = 20 mA
If= 20 mA
If = 20 mA
If = 10 μA
1.8
20
2.4
30
1.8
1.2 1.8
mW
mcd
V
2.4
1.2
5
1.7
Vr
Reverse Breakdown Voltage
5
V
lp
Δl
tr
Peak Wavelength
Spectral Halfwidth
Rise Time
If = 20 mA
If = 20 mA
If = 20 mA
If = 20 mA
658
661
21
664 870 880 890
nm
nm
uS
uS
50
0.1
0.8
0.8
tf
Fall Time
0.04
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com
ADVANCEDPHOTONIX [ ADVANCED PHOTONIX, INC. ]