Blue Enhanced Photovoltaic Silicon Photodiode
PDB-V104
PACKAGE DIMENSIONS INCH [mm]
PACKAGE DIMENSIONS INCH [mm]
.150 [3.81]
45°
Ø .215 [5.46]
.060 [1.52]
Ø .210 [5.33]
2X Ø.018 [0.46]
.100 [2.54]
ANODE
Ø .156 [3.96]
Ø .152 [3.86]
65°
CATHODE
VIEWING
ANGLE
Ø.187 [4.75]
Ø.181 [4.60]
CHIP DIMENSIONS INCH [mm]
CHIP DIMENSIONS INCH [mm]
.125 [3.18]
2X .500 [12.7] MIN
TO-46 PACKAGE
TO-46 PACKAGE
.066 [1.68]
.046 [1.17]
.104 [2.64]
ACTIVE AREA
ACTIVE AREA
FEATURES
DESCRIPTION
APPLICATIONS
• Low noise
The PDB-V104 is a blue enhanced PIN silicon
photodiode in a photovoltaic mode, packaged in a
TO-46 package.
• Instrumentation
• Industrial
• Medical
• Blue enhanced
• High shunt resistance
• High response
SPECTRAL RESPONSE
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
SYMBOL
VBR
PARAMETER
MIN
MAX
75
UNITS
Reverse Voltage
V
TSTG
TO
Storage Temperature
Operating Temperature
Soldering Temperature*
-55
-40
+150
+125
+240
°C
°C
°C
TS
* 1/16 inch from case for 3 seconds max.
Wavelength (nm)
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
ISC
CHARACTERISTIC
Short Circuit Current
Dark Current
TEST CONDITIONS
H = 100 fc, 2850 K
VR = 10 V
MIN
TYP
40
MAX
UNITS
μA
35
ID
150
6
300
pA
GW
RSH
Shunt Resistance
VR = 10 mV
1.0
CJ
Junction Capacitance
Spectral Application Range
Responsivity
VR = 0 V, f = 1 MHz
Spot Scan
340
pF
lrange
R
350
0.15
30
1100
nm
l= 450 nm V, VR = 0 V
I = 10 μA
VR = 0V @ l=Peak
RL = 50 Ω,VR = 0 V
RL = 50 Ω,VR = 10 V
0.17
50
5X10-14
190
A/W
V
VBR
Breakdown Voltage
Noise Equivalent Power
NEP
W/ √ Hz
tr
Response Time**
nS
13
**Response time of 10% to 90% is specified at 660nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com