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PDI-C172SMF 参数 Datasheet PDF下载

PDI-C172SMF图片预览
型号: PDI-C172SMF
PDF下载: 下载PDF文件 查看货源
内容描述: 光电二极管在塑料表面贴装 [Photodiode in Plastic Surface Mount]
分类和应用: 光电二极管光电二极管
文件页数/大小: 1 页 / 93 K
品牌: ADVANCEDPHOTONIX [ ADVANCED PHOTONIX, INC. ]
   
Photodiode in Plastic Surface Mount Package  
PDI-C172SMF  
PACKAGE DIMENSIONS INCH [mm]  
.158 [4.00]  
.043 [1.10]  
.019 [0.48]  
CATHODE MARK  
2X .020 [0.51]  
.079 [2.00]  
CATHODE  
.085 [2.15]  
130°  
VIEWING  
ANGLE  
.197 [5.00]  
.158 [4.00]  
.173 [4.40]  
.012 [0.30]  
ANODE  
.142 [3.61]  
2X .047 [1.19]  
CHIP DIMENSIONS INCH [mm]  
.118 [3.00] SQUARE  
2X .158 [4.00]  
SUGGESTED PAD LAYOUT  
FOR REFLOW SOLDERING  
.109 [2.77] SQUARE  
ACTIVE AREA  
SURFACE MOUNT PACKAGE  
FEATURES  
Surface mount  
• Photoconductive  
• Low cost  
DESCRIPTION  
APPLICATIONS  
The PDI-C172SMF is a blue enhanced PIN silicon  
photodiode ideal for high speed photoconductive or  
photovoltaic applications packaged in a black plastic  
surface mount package.  
• Photointerrupters  
• Oximeter sensors  
• Barcode  
• High speed  
• Glucometers  
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
SPECTRAL RESPONSE  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
SYMBOL  
VBR  
PARAMETER  
MIN  
MAX  
60  
UNITS  
Reverse Voltage  
V
TSTG  
TO  
Storage Temperature  
Operating Temperature  
Soldering Temperature*  
-55  
-40  
+100  
+80  
°C  
°C  
°C  
TS  
+260  
* 1/16 inch from case for 3 seconds max.  
250  
350  
450  
550  
650  
750  
850  
950  
1050 1150  
Wavelength (nM)  
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
SYMBOL  
CHARACTERISTIC  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
μA  
nA  
ISC  
ID  
Short Circuit Current  
Dark Current  
H = 100 fc, 2850 K  
VR = 10 V  
90  
4
30  
MW  
pF  
nm  
RSH  
CJ  
lrange  
VBR  
NEP  
tr  
Shunt Resistance  
VR = 10 mV  
VR = 10 V, f = 1 MHz  
Spot Scan  
400  
15  
Junction Capacitance  
Spectral Application Range  
Breakdown Voltage  
Noise Equivalent Power  
Response Time  
840  
60  
1050  
I = 10 μA  
VR = 10V @ l=Peak  
RL = 1K,VR = 10 V  
V
4x10-14  
20  
W/ Hz  
nS  
**Response time of 10% to 90% is specified at 660nm wavelength light.  
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are  
subject to change without notice.  
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com  
REV 2/13/07