Solderable Silicon Photodiodes
PDB-C612-2
PACKAGE DIMENSIONS INCH [mm]
PACKAGE DIMENSIONS INCH [mm]
± .050 [1.27]
2X 6.25 [158.7]
2X .250 [6.35]
2X TINNED
RED 30 AWG PVC WIRE, ANODE
BLACK 30 AWG PVC WIRE, CATHODE
.021 [0.53]
.014 [0.36]
CHIP DIMENSIONS INCH [mm]
CHIP DIMENSIONS INCH [mm]
.700 [17.78]
.035 [0.89]
SOLDERABLE PHOTODIODE
PVC WIRE PACKAGE
.200 [5.08]
.154 [3.91] ACTIVE AREA
.691 [17.55]
ACTIVE AREA
FEATURES
DESCRIPTION
The PDB-C612-2 is a silicon red enhanced
solderable photodiode designed for low capacitance
and high speed for photoconductive applications.
APPLICATIONS
• Red enhanced
• Optical encoder
• Position sensor
• Industrial controls
• Instrumentation
• Photocondutctive
• High quantum efficiency
SPECTRAL RESPONSE
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED 0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
SYMBOL
VBR
PARAMETER
MIN
MAX
75
UNITS
Reverse Voltage
V
TSTG
TO
Storage Temperature
Operating Temperature
Soldering Temperature*
-40
-40
+125
+100
+224
°C
°C
°C
TS
* 1/16 inch from case for 3 seconds max.
Wavelength (nm)
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
μA
nA
ISC
ID
Short Circuit Current
Dark Current
H = 100 fc, 2850 K
VR = 5 V
810
900
75
150
MW
pF
nm
RSH
CJ
lrange
VBR
NEP
tr
Shunt Resistance
VR = 10 mV
VR = 5 V, f = 1 MHz
Spot Scan
5
10
240
Junction Capacitance
Spectral Application Range
Breakdown Voltage
Noise Equivalent Power
Response Time
350
25
1100
I = 10 μA
VR = 0V @ l=Peak
RL = 1KΩ,VR = 5V
50
7x10-13
45
V
W/ √ Hz
nS
**Response time of 10% to 90% is specified at 660nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com
ADVANCEDPHOTONIX [ ADVANCED PHOTONIX, INC. ]