Blue Enhanced Photoconductive Silicon Photodiode
PDB-C164
PACKAGE DIMENSIONS INCH [mm]
PACKAGE DIMENSIONS INCH [mm]
.075 [1.91]
.055 [1.40]
.167 [4.24]
.021 [0.53]
.025 [0.64]
.019 [0.50]
.250 [6.35]
CATHODE
ANODE
SOLDER PAD
SOLDER PAD
CHIP DIMENSIONS INCH [mm]
CHIP DIMENSIONS INCH [mm]
.125 [3.18]
METALIZED CERAMIC PACKAGE
METALIZED CERAMIC
PACKAGE
.066 [1.68]
.046 [1.17]
.104 [2.64]
ACTIVE AREA
ACTIVE AREA
FEATURES
DESCRIPTION
APPLICATIONS
• Low noise
The PDB-C164 is a blue enhanced PIN silicon
photodiode in a photoconductive mode, packaged in
a metalized ceramic package.
• Instrumentation
• Industrial
• Medical
• Blue enhanced
• High shunt resistance
• High response
SPECTRAL RESPONSE
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
SYMBOL
VBR
PARAMETER
MIN
MAX
75
UNITS
Reverse Voltage
V
TSTG
TO
Storage Temperature
Operating Temperature
Soldering Temperature*
-45
-40
+100
+80
°C
°C
°C
TS
+240
* 1/16 inch from case for 3 seconds max.
Wavelength (nm)
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
μA
nA
ISC
ID
Short Circuit Current
Dark Current
H = 100 fc, 2850 K
VR = 10V
20
25
1
10
RSH
CJ
Shunt Resistance
Junction Capacitance
VR = 10 mV
VR =10 V, f = 1 MHz
100
500
7
MΩ
pF
lrange
R
Spectral Application Range
Spot Scan
350
0.15
50
1100
nm
l= 450 nm V, VR = 0 V
I = 10 μA
VR =10V @ l=950nm
RL = 50 Ω,VR = 0 V
RL = 50 Ω,VR = 10 V
Responsivity
0.18
75
A/W
V
VBR
NEP
Breakdown Voltage
Noise Equivalent Power
1x10-14
190
W/ √ Hz
tr
Response Time**
nS
13
**Response time of 10% to 90% is specified at 660nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com