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PDB-C110 参数 Datasheet PDF下载

PDB-C110图片预览
型号: PDB-C110
PDF下载: 下载PDF文件 查看货源
内容描述: 蓝光电导增强硅光电二极管 [Blue Enhanced Photoconductive Silicon Photodiode]
分类和应用: 光电二极管光电二极管
文件页数/大小: 1 页 / 98 K
品牌: ADVANCEDPHOTONIX [ ADVANCED PHOTONIX, INC. ]
   
Blue Enhanced Photoconductive Silicon Photodiode  
PDB-C110  
.084 [2.13]  
.076 [1.93]  
±.005 [0.13]  
.053 [1.35]  
PACKAGE DIMENSIONS INCH [mm]  
ANODE INDEX  
2X Ø.017 [0.43]  
.484 [12.29]  
ANODE  
120°  
VIEWING  
ANGLE  
.657 [16.69]  
.643 [16.33]  
CATHODE  
.596 [15.14]  
.584 [14.83]  
2X .50 [12.7]  
.005 [0.13] MAX  
EPOXY ABOVE PACKAGE  
CHIP DIMENSIONS INCH [mm]  
.408 [10.36]  
CERAMIC PACKAGE  
.402 [10.21]  
.371 [9.42] ACTIVE AREA  
.391 [9.93] ACTIVE AREA  
FEATURES  
DESCRIPTION  
APPLICATIONS  
Low noise  
The PDB-C110 is a blue enhanced PIN silicon  
photodiode in a photoconductive mode, packaged in  
a ceramic package.  
• Instrumentation  
• Industrial  
• Medical  
• Blue enhanced  
• High shunt resistance  
• High response  
SPECTRAL RESPONSE  
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
0.70  
0.60  
0.50  
0.40  
0.30  
0.20  
0.10  
0.00  
SYMBOL  
VBR  
PARAMETER  
MIN  
MAX  
75  
UNITS  
Reverse Voltage  
V
TSTG  
TO  
Storage Temperature  
Operating Temperature  
Soldering Temperature*  
-20  
-20  
+80  
+60  
+240  
°C  
°C  
°C  
TS  
* 1/16 inch from case for 3 seconds max.  
Wavelength (nm)  
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
SYMBOL  
CHARACTERISTIC  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
ISC  
ID  
Short Circuit Current  
Dark Current  
H = 100 fc, 2850 K  
VR = 10V  
1.0  
1.3  
10  
mA  
nA  
30  
RSH  
CJ  
Shunt Resistance  
Junction Capacitance  
VR = 10 mV  
VR =10 V, f = 1 MHz  
15  
30  
300  
MΩ  
pF  
lrange  
R
Spectral Application Range  
Spot Scan  
350  
0.15  
30  
1100  
nm  
l= 450 nm V, VR = 0 V  
I = 10 μA  
VR = 0V @ l=Peak  
RL = 50 ,VR = 0 V  
RL = 50 ,VR = 10 V  
Responsivity  
0.17  
50  
A/W  
V
VBR  
NEP  
Breakdown Voltage  
Noise Equivalent Power  
3x10-13  
190  
W/ Hz  
tr  
Response Time**  
nS  
13  
**Response time of 10% to 90% is specified at 660nm wavelength light.  
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are  
subject to change without notice.  
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com