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APT8030LVR 参数 Datasheet PDF下载

APT8030LVR图片预览
型号: APT8030LVR
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS V是新一代高压N沟道增强型功率MOSFET 。 [Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲高压局域网
文件页数/大小: 4 页 / 64 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
 浏览型号APT8030LVR的Datasheet PDF文件第1页浏览型号APT8030LVR的Datasheet PDF文件第2页浏览型号APT8030LVR的Datasheet PDF文件第4页  
APT8030LVR  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
V
=5.5V, 6V, 7V, 10V & 15V  
GS  
V
=15V  
GS  
=10V  
V
GS  
=5.5V, 6V & 7V  
5V  
V
GS  
5V  
4.5V  
4V  
4.5V  
4V  
0
V
100  
200  
300  
400  
0
V
4
8
12  
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
DS  
16  
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
DS  
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS  
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS  
100  
80  
60  
40  
20  
0
1.4  
T
= -55°C  
NORMALIZED TO  
J
V
= 10V  
@
0.5 I [Cont.]  
D
GS  
T
J
= +25°C  
J
1.3  
1.2  
1.1  
1.0  
0.9  
T
= +125°C  
V
> I (ON) x  
R
(ON)MAX.  
DS  
D
DS  
250µSEC. PULSE TEST  
@ <0.5 % DUTY CYCLE  
V
=10V  
GS  
V
=20V  
GS  
T
= +125°C  
= +25°C  
J
T
T
= -55°C  
J
J
0
V
2
4
6
8
0
10  
20  
30  
40  
50  
60  
, GATE-TO-SOURCE VOLTAGE (VOLTS)  
I , DRAIN CURRENT (AMPERES)  
GS  
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS  
FIGURE 5, R (ON) vs DRAIN CURRENT  
DS  
1.15  
30  
25  
20  
15  
10  
5
1.10  
1.05  
1.00  
0.95  
0.90  
0
25  
50  
75  
100  
125  
150  
-50 -25  
0
25 50 75 100 125 150  
T , CASE TEMPERATURE (°C)  
T , JUNCTION TEMPERATURE (°C)  
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE  
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE  
1.2  
2.5  
I
= 0.5 I [Cont.]  
D
D
V
= 10V  
GS  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
2.0  
1.5  
1.0  
0.5  
0.0  
-50 -25  
0
25 50  
75 100 125 150  
-50 -25  
0
25 50 75 100 125 150  
T , JUNCTION TEMPERATURE (°C)  
T , CASE TEMPERATURE (°C)  
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE  
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE