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APT25GP90BDQ1G 参数 Datasheet PDF下载

APT25GP90BDQ1G图片预览
型号: APT25GP90BDQ1G
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS 7 IGBT [POWER MOS 7 IGBT]
分类和应用: 晶体晶体管功率控制瞄准线双极性晶体管局域网
文件页数/大小: 9 页 / 444 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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TYPICAL PERFORMANCE CURVES
+18V
0V
di
F
/dt Adjust
Vr
APT10035LLL
APT25GP90BDQ1(G)
D.U.T.
30µH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 32. Diode Test Circuit
1
2
3
4
I
F
- Forward Conduction Current
di
F
/dt - Rate of Diode Current Change Through Zero Crossing.
I
RRM
- Maximum Reverse Recovery Current.
Zero
1
4
5
3
2
trr - Reverse
Recovery
Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through I
RRM
and 0.25 I
RRM
passes through zero.
Qrr - Area Under the Curve Defined by I
RRM
and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.55 (.138)
3.81 (.150)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Collector
(Cathode)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7476
Dimensions in Millimeters and (Inches)
Rev A
Gate
Collector
(Cathode)
Emitter
(Anode)
11-2005
19.81 (.780)
20.32 (.800)