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APT25GN120S 参数 Datasheet PDF下载

APT25GN120S图片预览
型号: APT25GN120S
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT [IGBT]
分类和应用: 晶体晶体管功率控制双极性晶体管
文件页数/大小: 6 页 / 197 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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TYPICAL PERFORMANCE CURVES
80
70
I
C
, COLLECTOR CURRENT (A)
60
50
40
30
20
10
0
80
70
I
C
, COLLECTOR CURRENT (A)
APT25GN120B_S(G)
15V
15V
12V
11V
60
50
40
30
20
10
0
12V
11V
10V
9V
8V
7V
10V
9V
8V
7V
75
FIGURE 1, Output Characteristics(T
J
= 25°C)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
0
5
10
15
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
16
14
12
10
FIGURE 2, Output Characteristics (T
J
= 125°C)
I = 25A
C
T = 25°C
J
0
5
10
15
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
60
V
CE
= 240V
V
CE
= 600V
V
CE
= 960V
T
J
= 125°C
45
T
J
= 25°C
30
8
6
4
2
0
T
J
= -55°C
15
0
0
2
4
6
8
10
12
14
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
20
40
60 80 100 120 140 160 180
GATE CHARGE (nC)
FIGURE 4, Gate Charge
3
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
3.5
3
2.5
2
1.5
1.0
0.5
T
J
= 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 50A
2.5
2
I
C
= 50A
I
C
= 25A
I
C
= 25A
1.5
1
0.5
I
C
= 12.5A
I
C
= 12.5A
10
12
14
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
0
8
-25
0
25
50
75 100 125
T
J
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
90
0
-50
V
GE
= 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
I
C,
DC COLLECTOR CURRENT(A)
80
70
60
50
40
11-2005
050-7600
Rev D
30
20
10
1.05
1.00
0.95
-25
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90
-50
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
0
-50