TYPICAL PERFORMANCE CURVES
®
APT25GP90BDQ1
APT25GP90BDQ1G*
APT25GP90BDQ1(G)
900V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7 IGBT
®
TO
-2
47
The POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• SSOA Rated
G
C
E
C
G
E
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT25GP90BDQ1(G)
UNIT
Volts
900
±30
72
36
110
110A @ 900V
417
-55 to 150
300
Amps
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 350µA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 900V, V
GE
= 0V, T
j
= 25°C)
Gate-Emitter Leakage Current (V
GE
= ±20V)
2
2
MIN
TYP
MAX
Units
900
3
4.5
3.2
2.7
350
1000
±100
µA
nA
11-2005
050-7476
Rev A
6
3.9
Volts
Collector Cut-off Current (V
CE
= 900V, V
GE
= 0V, T
j
= 125°C)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com