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APT25GP120BDQ1 参数 Datasheet PDF下载

APT25GP120BDQ1图片预览
型号: APT25GP120BDQ1
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS 7 IGBT [POWER MOS 7 IGBT]
分类和应用: 晶体晶体管功率控制瞄准线双极性晶体管局域网
文件页数/大小: 9 页 / 212 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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TYPICAL PERFORMANCE CURVES
60
50
40
30
60
50
40
30
APT25GP120BDQ1(G)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
T
J
= 25°C
20
T
J
= 25°C
20
T
J
= 125°C
10
0
T
J
= 125°C
10
0
100
FIGURE 1, Output Characteristics(T
J
= 25°C)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
0
1
2
3
4
5
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
16
14
12
10
FIGURE 2, Output Characteristics (T
J
= 125°C)
I = 25A
C
T = 25°C
J
0
1
2
3
4
5
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
80
V
CE
=240V
V
CE
=600V
60
T
J
= -55°C
40
T
J
= 25°C
20
T
J
= 125°C
0
8
6
4
2
0
V
CE
= 480V
0
2 3 4
5 6
7 8
9 10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
1
0
20
40
60
80
100
GATE CHARGE (nC)
FIGURE 4, Gate Charge
120
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
C
= 50A
T
J
= 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V
GE
= 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 50A
I
C
= 25A
I
C
= 12.5A
I
C
= 25A
I
C
= 12.5A
8
10
12
14
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
0
6
0
25
50
75
100
125
T
J
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
100
0
-25
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
I
C,
DC COLLECTOR CURRENT(A)
90
80
70
60
50
40
30
20
10
6-2005
050-7457
Rev A
1.06
1.02
0.98
0.94
-25
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90
-50
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
0
-50