APT25GN120B2DQ2 参数 Datasheet PDF下载

TYPICAL PERFORMANCE CURVES

®

APT25GN120B2DQ2

APT25GN120B2DQ2G*

APT25GN120B2DQ2(G)

1200V

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s

have a very short, low amplitude tail current and low Eoff. The Trench Gate design

results in superior V

CE(on)

performance. Easy paralleling results from very tight

parameter distribution and slightly positive V

CE(on)

temperature coefficient. Built-in

gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive

design and minimizes losses.

(B2)

T-Max

®

•

•

•

•

•

1200V NPT Field Stop

Trench Gate: Low V

CE(on)

Easy Paralleling

10µs Short Circuit Capability

Intergrated Gate Resistor: Low EMI, High Reliability

C

G

E

Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS

MAXIMUM RATINGS

Symbol

V

CES

V

GE

I

C1

I

C2

I

CM

SSOA

P

D

T

J

,T

STG

T

L

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current @ T

C

= 25°C

Continuous Collector Current @ T

C

= 110°C

Pulsed Collector Current

1

All Ratings: T

C

= 25°C unless otherwise specified.

APT25GN120B2DQ2(G)

UNIT

Volts

1200

±30

67

33

75

75A @ 1200V

272

-55 to 150

300

Amps

@ T

C

= 150°C

Switching Safe Operating Area @ T

J

= 150°C

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

Watts

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

V

(BR)CES

V

GE(TH)

V

CE(ON)

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

GE

= 0V, I

C

= 150µA)

Gate Threshold Voltage

(V

CE

= V

GE

, I

C

= 1mA, T

j

= 25°C)

MIN

TYP

MAX

Units

1200

5

1.4

2

2

5.8

1.7

1.9

6.5

2.1

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 25A, T

j

= 25°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 25A, T

j

= 125°C)

Collector Cut-off Current (V

CE

= 1200V, V

GE

= 0V, T

j

= 25°C)

Volts

I

CES

I

GES

R

GINT

200

TBD

600

8

Gate-Emitter Leakage Current (V

GE

= ±20V)

Intergrated Gate Resistor

nA

Ω

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

050-7603

Rev B

10-2005

Collector Cut-off Current (V

CE

= 1200V, V

GE

= 0V, T

j

= 125°C)

µA