欢迎访问ic37.com |
会员登录 免费注册
发布采购

APT20M38SVFR 参数 Datasheet PDF下载

APT20M38SVFR图片预览
型号: APT20M38SVFR
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS V是新一代高压N沟道增强型功率MOSFET 。 [Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲高压局域网
文件页数/大小: 4 页 / 155 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
 浏览型号APT20M38SVFR的Datasheet PDF文件第1页浏览型号APT20M38SVFR的Datasheet PDF文件第2页浏览型号APT20M38SVFR的Datasheet PDF文件第3页  
APT20M38B_SVFR(G)
300
I
D
, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
10µS
100µS
C, CAPACITANCE (pF)
15,000
10,000
Ciss
5,000
Coss
Crss
100
50
1mS
10
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
1,000
500
10mS
100mS
DC
1
5
10
50 100 200
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
.01
.1
1
10
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
100
20
I = I [Cont.]
D
D
300
16
VDS=40V
VDS=100V
100
50
TJ =+150°C
TJ =+25°C
12
VDS=160V
8
10
5
4
50
100
150
200
250
300
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0
0.4
0.8
1.2
1.6
2.0
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
TO-247 (BVFR) Package Outline
e1 SAC: Tin, Silver, Copper
D PAK (SVFR) Package Outline
e3 100% Sn
3
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
1.04 (.041)
1.15(.045)
13.41 (.528)
13.51(.532)
Drain
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
Revised
4/18/95
13.79 (.543)
13.99(.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
0.46 (.018)
0.56 (.022) {3 Plcs}
4.50 (.177) Max.
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3-2006
0.40 (.016)
0.79 (.031)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
19.81 (.780)
20.32 (.800)
1.22 (.048)
1.32 (.052)
3.81 (.150)
4.06 (.160)
(Base of Lead)
050-5602 Rev D
Gate
Drain
Source
Heat Sink (Drain)
and Leads
are Plated
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.