260
100
OPERATION HERE
LIMITED BY RDS (ON)
10,000
5,000
APT20M36 BFLL_SFLL
Ciss
I
D
, DRAIN CURRENT (AMPERES)
C, CAPACITANCE (pF)
50
100µS
1,000
500
Coss
10
1mS
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
5
10
50 100 200
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
100
50
Crss
10mS
1
1
16
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
14
12
10
8
6
4
2
50
100
150
200
250
300
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
45
40
35
t
d(off)
0
0
VDS=40V
VDS=100V
VDS=160V
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
I
= 65A
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
50
TJ =+150°C
TJ =+25°C
10
0
10
5
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
V
DD
G
= 133V
R
= 5Ω
100
80
t
r
and t
f
(ns)
T = 125°C
J
L = 100µH
V
DD
G
t
d(on)
and t
d(off)
(ns)
30
25
20
15
10
5
0
30
= 133V
R
= 5Ω
T = 125°C
J
L = 100µH
60
40
20
0
30
t
f
t
r
t
d(on)
60
70
80
90
100
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
G
40
50
60
70
80
90
100
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1000
40
50
1200
= 133V
R
= 5Ω
1000
SWITCHING ENERGY (µJ)
T = 125°C
L = 100µH
SWITCHING ENERGY (µJ)
J
800
E
on
600
E
off
400
V
I
DD
800
600
400
200
0
30
E
ON
includes
diode reverse recovery.
E
on
= 133V
7-2004
D
J
= 65A
E
off
200
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
050-7048 Rev C
60
70
80
90
100
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
40
50
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
ADPOW [ ADVANCED POWER TECHNOLOGY ]
