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APT20M34BLL_04 参数 Datasheet PDF下载

APT20M34BLL_04图片预览
型号: APT20M34BLL_04
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS 7 MOSFET [POWER MOS 7 MOSFET]
分类和应用:
文件页数/大小: 5 页 / 205 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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297
OPERATION HERE
LIMITED BY RDS (ON)
20,000
10,000
APT20M34BLL_SLL
I
D
, DRAIN CURRENT (AMPERES)
100
100µS
C, CAPACITANCE (pF)
Ciss
1,000
Coss
10
1mS
10mS
100
Crss
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
10
100 200
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 74A
200
100
TJ =+150°C
TJ =+25°C
12
VDS=40V
VDS=100V
8
VDS=160V
10
4
20 30 40 50 60 70 80 90 100
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
50
t
d(off)
40
0
0
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
100
V
DD
G
= 133V
R
= 5Ω
T = 125°C
J
L = 100µH
V
DD
G
t
d(on)
and t
d(off)
(ns)
= 133V
80
t
r
and t
f
(ns)
30
R
= 5Ω
T = 125°C
J
t
f
60
40
20
0
10
t
r
L = 100µH
20
t
d(on)
10
0
10
70
90
110
130
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
G
30
50
70
90
110
130
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1200
30
50
1200
= 133V
R
= 5Ω
1000
SWITCHING ENERGY (µJ)
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
800
600
400
200
0
10
E
on
SWITCHING ENERGY (µJ)
J
1000
800
600
400
200
0
V
I
E
off
E
on
9-2004
E
off
DD
= 133V
D
J
= 74A
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
050-7008 Rev B
70
90
110
130
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
30
50
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5