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APT20M18LVFR 参数 Datasheet PDF下载

APT20M18LVFR图片预览
型号: APT20M18LVFR
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS V是新一代高压N沟道增强型功率MOSFET 。 [Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲高压局域网
文件页数/大小: 2 页 / 43 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
 浏览型号APT20M18LVFR的Datasheet PDF文件第1页  
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT20M18 B2VFR - LVFR
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
V
GS
= 15V
MIN
TYP
MAX
UNIT
pF
9910
2270
650
330
75
18
27
54
6
143
nC
Gate-Source Charge
Turn-on Delay Time
Rise Time
Gate-Drain ("Miller") Charge
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
dv
/
dt
Characteristic / Test Conditions
Pulsed Source Current
1
Continuous Source Current (Body Diode)
(Body Diode)
6
Diode Forward Voltage
Peak Diode Recovery
dv
/
dt
t
rr
Q
rr
I
RRM
Reverse Recovery Time
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
L
A
IC
N
H
C N
TE IO
D AT
E
C
M
N
R
A
V
FO
D IN
A
I
D
= I
D
[Cont.] @ 25°C
V
DD
= 0.5 V
DSS
R
G
= 0.6W
I
D
= I
D
[Cont.] @ 25°C
MIN
TYP
2
ns
MAX
UNIT
Amps
Volts
V/ns
ns
100
400
1.3
5
(V
GS
= 0V, I
S
= -I
D
[Cont.])
T
j
= 25°C
T
j
= 25°C
230
450
T
j
= 125°C
0.9
3.4
11
20
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
µC
Amps
THERMAL CHARACTERISTICS
Symbol
R
qJC
R
qJA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.20
40
4
Starting T = +25°C, L = 600µH, R = 25W, Peak I = 100A
j
G
L
5
The maximum current is limited by lead temperature.
6
I
£
I [Cont.],
di
/
= 100A/µs, V = 50V, T
£
150°C, R = 2.0W
S
D
R
j
G
dt
1
Repetitive Rating: Pulse width limited by maximum T
j
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAX™ (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
Collector
Collector
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
4.50
(.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
rev- 11-99
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Gate
Collector
Emitter
Gate
Collector
Emitter
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.79 (.110)
2.59 (.102)
3.18 (.125)
3.00 (.118)
5.45 (.215) BSC
2-Plcs.
050-5906
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058