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APT20M16LFLL 参数 Datasheet PDF下载

APT20M16LFLL图片预览
型号: APT20M16LFLL
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS 7TM是新一代低损耗,高电压,N沟道增强型功率MOSFET 。 [Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.]
分类和应用:
文件页数/大小: 2 页 / 75 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
 浏览型号APT20M16LFLL的Datasheet PDF文件第1页  
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT20M16 B2FLL - LFLL
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
V
GS
= 15V
MIN
TYP
MAX
UNIT
pF
7020
2380
180
174
53
96
14
24
29
7
nC
Gate-Source Charge
Turn-on Delay Time
Rise Time
Gate-Drain ("Miller ") Charge
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
dv
/
dt
Characteristic / Test Conditions
Pulsed Source Current
1
Continuous Source Current (Body Diode)
(Body Diode)
6
Diode Forward Voltage
Peak Diode Recovery
dv
/
dt
t
rr
Q
rr
I
RRM
Reverse Recovery Time
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
L
A
IC
N
H
EC ION
T T
E A
C M
N R
A O
V F
D N
A
I
I
D
= I
D
[Cont.] @ 25°C
V
DD
= 0.5 V
DSS
R
G
= 0.6W
I
D
= I
D
[Cont.] @ 25°C
MIN
TYP
2
ns
MAX
UNIT
Amps
Volts
V/ns
ns
100
400
1.3
8
230
450
(V
GS
= 0V, I
S
= -I
D
[Cont.])
T
j
= 25°C
T
j
= 25°C
T
j
= 125°C
0.9
3.4
11
20
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
µC
Amps
THERMAL CHARACTERISTICS
Symbol
R
qJC
R
qJA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.18
40
4
Starting T = +25°C, L = .6mH, R = 25W, Peak I = 100A
j
G
L
5
The maximum current is limited by lead temperature
6 dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
IS
£
-
ID
[
Cont.
] di
/
dt
£
700A/µs
VR
£
VDSS TJ
£
150
°
C
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAX
TM
(B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
Drain
20.80 (.819)
21.46 (.845)
Drain
25.48 (1.003)
26.49 (1.043)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
050-7044 Rev A 8-2001
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058