704
500
I
D
, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
30,000
10,000
100µS
C, CAPACITANCE (pF)
APT20M11JFLL
Ciss
Coss
100
50
1,000
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
5
10
50 100 200
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
100
50
Crss
10mS
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
500
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
10
1
10
0
16
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
= 176A
14
12
10
8
6
4
2
50
100
150
200
250
300
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
160
140
120
t
d(off)
V
DD
G
VDS=40V
VDS=100V
100
50
TJ =+150°C
TJ =+25°C
VDS=160V
10
5
0
0
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
300
250
200
V
DD
G
= 130V
R
= 5Ω
T = 125°C
J
L = 100µH
= 130V
t
d(on)
and t
d(off)
(ns)
R
= 5Ω
80
60
40
20
0
T = 125°C
J
t
r
and t
f
(ns)
100
t
f
150
100
50
0
t
r
L = 100µH
t
d(on)
30
120 150 180 210 240 270
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
G
60
90
120 150 180 210 240 270
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10000
V
I
DD
30
60
90
8000
= 130V
R
= 5Ω
= 130V
D
J
= 176A
T = 125°C
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
6000
J
8000
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
L = 100µH
E
ON
includes
diode reverse recovery.
E
off
6000
4000
E
off
2000
E
on
120 150 180 210 240 270
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
30
60
90
4000
E
on
2000
050-7042 Rev C
9-2004
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
ADPOW [ ADVANCED POWER TECHNOLOGY ]
