DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT20GT60AR
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25°C)
V
GE
= 15V
V
CC
= 0.8V
CES
I
C
= I
C2
R
G
= 10W
MIN
TYP
MAX
UNIT
1100
110
65
95
40
8
10
34
115
125
15
15
ns
nC
pF
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Y
R
A
IN
IM
L
E
R
P
Inductive Switching (150°C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10W
ns
190
30
0.55
0.45
1.0
15
18
T
J
= +150°C
mJ
Inductive Switching (25°C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10W
ns
160
25
Total Switching Losses
Forward Transconductance
T
J
= +25°C
V
CE
= 20V, I
C
= I
C2
0.60
4
mJ
S
THERMAL CHARACTERISTICS
Symbol
R
QJC
R
QJA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.90
80
1
2
6-2000
Repetitive Rating: Pulse width limited by maximum junction temperature.
I
C
= I
C2
, R
GE
= 25
W
, L = 200µH, T
j
= 25°C
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
3
050-5969
Rev -
ADPOW [ ADVANCED POWER TECHNOLOGY ]
