APT200GN60JDQ4
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
SCSOA
t
d(on)
t
d(off)
t
f
E
on1
E
on2
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
E
off
t
r
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
CE
= 300V
I
C
= 100A
T
J
= 175°C, R
G
= 1.0Ω
7
,
V
GE
=
15V, L = 100µH, V
CE
= 600V
V
CC
= 360V, V
GE
= 15V,
T
J
= 150°C, R
G
= 1.0Ω
7
Inductive Switching (25°C)
V
CC
= 400V
V
GE
= 15V
I
C
= 200A
V
GE
= 15V
MIN
TYP
MAX
UNIT
pF
V
nC
14100
4610
4000
8.2
1180
85
660
600
5
50
80
560
100
13
15
11
50
80
620
70
14
16
10
m
J
ns
ns
A
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Short Circuit Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
4
4
55
4
5
µ
s
R
G
= 1.0Ω
7
Turn-on Switching Energy (Diode)
6
T
J
= +25°C
m
J
Inductive Switching (125°C)
V
CC
=400V
V
GE
= 15V
I
C
= 200A
Turn-on Switching Energy (Diode)
66
T
J
= +125°C
R
G
= 1.0Ω
7
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
θ
JC
R
θ
JC
V
Isolation
W
T
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
RMS Voltage (
50-60Hz Sinusoidal
Package Weight
Wavefom from Terminals to Mounting Base for 1 Min.)
MIN
TYP
MAX
UNIT
°C/W
Volts
.22
.33
2500
1.03
29.2
10
1.1
oz
gm
Ib•in
N•m
Torque
1
Maximum Terminal & Mounting Torque
Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3-2005
Rev B
050-7611
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R
G
is external gate resistance, not including R
G(int)
nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.
ADPOW [ ADVANCED POWER TECHNOLOGY ]
