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APT150GN120J 参数 Datasheet PDF下载

APT150GN120J图片预览
型号: APT150GN120J
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT [IGBT]
分类和应用: 晶体晶体管功率控制瞄准线双极性晶体管局域网
文件页数/大小: 6 页 / 421 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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TYPICAL PERFORMANCE CURVES
300
250
200
150
100
50
0
V
GE
= 15V
400
350
APT150GN120J
6.5, 10 &15V
6V
I
C
, COLLECTOR CURRENT (A)
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
I
C
, COLLECTOR CURRENT (A)
300
250
200
150
100
50
0
T
J
= 175°C
5.5V
5V
4.5V
4V
300
250
200
FIGURE 1, Output Characteristics(T
J
= 25°C)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
0
0.5 1.0
1.5 2.0
2.5 3.0
3.5
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
14
12
10
FIGURE 2, Output Characteristics (T
J
= 125°C)
I = 150A
C
T = 25°C
J
0
5
10
15
20
25
30
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
V
CE
= 240V
V
CE
= 600V
T
J
= -55°C
150
100
50
0
T
J
= 25°C
T
J
= 125°C
0
2
4
6
8
10
12
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
8
6
4
2
0
0
200
V
CE
= 960V
400
600
800
GATE CHARGE (nC)
1000
FIGURE 4, Gate Charge
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5
3
2.5
2
1.5
1
0.5
V
GE
= 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
C
= 300A
T
J
= 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 300A
I
C
= 150A
I
C
= 75A
I
C
= 150A
I
C
= 75A
10
12
14
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.15
0
8
0
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
300
I
C,
DC COLLECTOR CURRENT(A)
V
GS(TH)
, THRESHOLD VOLTAGE
(NORMALIZED)
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
250
200
150
100
50
0
-50
11-2005
050-7608
Rev B
0.70
-50 -25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature