TYPICAL PERFORMANCE CURVES
®
APT15GN120BDQ1
APT15GN120BDQ1G*
APT15GN120BDQ1(G)
1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
CE(ON)
and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive V
CE(ON)
temperature coefficient. Low gate charge simplifies gate drive
design and minimizes losses.
G
C
E
TO
-2
47
• Trench Gate: Low V
CE(on)
• Easy Paralleling
•
1200V Field Stop
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT15GN120BDQ1(G)
UNIT
Volts
1200
±30
45
22
45
45A @ 1200V
195
-55 to 150
300
Amps
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 600µA, T
j
= 25°C)
MIN
TYP
MAX
Units
1200
5.0
1.4
2
2
5.8
1.7
2.0
6.5
2.1
200
TBD
120
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25°C)
Volts
I
CES
I
GES
R
GINT
Gate-Emitter Leakage Current (V
GE
= ±20V)
Intergrated Gate Resistor
nA
Ω
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7598
Rev B
N/A
10-2005
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125°C)
µA
ADPOW [ ADVANCED POWER TECHNOLOGY ]
