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APT14050JVFR 参数 Datasheet PDF下载

APT14050JVFR图片预览
型号: APT14050JVFR
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS V FREDFET [POWER MOS V FREDFET]
分类和应用: 晶体晶体管开关脉冲局域网
文件页数/大小: 4 页 / 136 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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92
I
D
, DRAIN CURRENT (AMPERES)
50
OPERATION HERE
LIMITED BY RDS (ON)
60,000
APT14050JVFR
10
5
1mS
10mS
C, CAPACITANCE (pF)
100µS
Ciss
10,000
1,000
Coss
Crss
I
D
= 23A
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
10
100
500 1400
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
100
12
VDS= 280V
8
VDS= 700V
TJ =+150°C
10
TJ =+25°C
4
VDS= 1000V
200
400
600
800
1000
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0.3
0.7
1.1
1.5
1.9
2.3
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4-2004
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
1.95 (.077)
2.14 (.084)
* Source
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
050-7259 Rev A
* Source
Dimensions in Millimeters and (Inches)
ISOTOP
®
is a Registered Trademark of SGS Thomson.
Gate
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.