TYPICAL PERFORMANCE CURVES
40
35
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
40
35
30
25
20
15
10
5
0
T
J
= 125°C
T
J
= 25°C
T
J
= -55°C
APT13GP120B_S(G)
30
25
20
15
10
5
0
T
J
= 125°C
T
J
= 25°C
T
J
= -55°C
40
I
C
, COLLECTOR CURRENT (A)
FIGURE 1, Output Characteristics(T
J
= 25°C)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
0
1
2
3
4
5
6
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
16
14
12
10
FIGURE 2, Output Characteristics (T
J
= 125°C)
I = 13A
C
T = 25°C
J
0
1
2
3
4
5
6
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
35
30
25
20
15
10
5
0
V
CE
= 240V
V
CE
= 600V
8
6
4
2
0
0
10
20
30
40
GATE CHARGE (nC)
FIGURE 4, Gate Charge
50
60
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
V
CE
= 960V
0
2
3
4
5
6
7
8
9
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
1
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
6
5
4
3
2
1
0
T
J
= 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
5
I
C
= 26A
I
C
= 13A
I
C
= 26A
I
C
= 13A
4
3
I
C
= 6.5A
I
C
= 6.5A
2
1
V
GE
= 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
8
10
12
14
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
6
-25
0
25
50
75 100 125
T
J
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
0
-55
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
60
I
C,
DC COLLECTOR CURRENT(A)
50
40
30
20
10
0
-50
1.05
1.00
0.95
050-7412
-25
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90
-50
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
Rev E
1-2006
ADPOW [ ADVANCED POWER TECHNOLOGY ]
