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APT13GP120BSC 参数 Datasheet PDF下载

APT13GP120BSC图片预览
型号: APT13GP120BSC
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN]
分类和应用: 双极性晶体管
文件页数/大小: 6 页 / 409 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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TYPICAL PERFORMANCE CURVES
3,000
1,000
500
C, CAPACITANCE ( F)
P
60
C
ies
I
C
, COLLECTOR CURRENT (A)
50
40
30
20
10
APT13GP120B_S(G)
100
50
C
oes
10
C
res
0
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
1
0
200
400
600
800
1000
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0
0.60
0.50
0.40
0.30
0.20
0.10
0
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.9
0.7
0.5
0.3
0.1
0.05
10
-5
10
-4
Note:
PDM
t1
t2
SINGLE PULSE
Duty Factor D =
1
/
t2
Peak TJ = PDM x Z
θJC
+ TC
t
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
181
F
MAX
, OPERATING FREQUENCY (kHz)
100
RC MODEL
Junction
temp. (°C)
0.216
Power
(watts)
0.284
Case temperature. (°C)
0.161F
0.006F
50
= min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
max
T = 125
°
C
J
T = 75
°
C
C
D = 50 %
V
= XXXV
CE
R = 5Ω
G
F
f
max2
=
P
diss
=
P
diss
- P
cond
E
on2
+ E
off
T
J
- T
C
R
θJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10
15
20
25
30
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
10
5
050-7412
Rev E
1-2006