DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Symbol
I
S
I
SM
V
SD
dv
/
dt
APT12040L2FLL
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 600V
I
D
= 30A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 600V
I
D
= 30A @ 25°C
6
R
G
= 0.6Ω
INDUCTIVE SWITCHING @ 25°C
V
DD
= 800V, V
GS
= 15V
6
I
D
= 30A, R
G
= 5Ω
INDUCTIVE SWITCHING @ 125°C
V
DD
= 800V, V
GS
= 15V
I
D
= 30A, R
G
= 5Ω
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
MIN
TYP
MAX
UNIT
pF
7247
1102
200
275
32
179
21
14
67
24
1265
1147
2293
1411
MIN
TYP
MAX
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
1
2
dt
nC
ns
µ
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
V/ns
ns
30
120
1.3
18
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
MIN
(Body Diode)
(V
GS
= 0V, I
S
= -30A)
5
dv
/
t
rr
Reverse Recovery Time
(I
S
= -30A,
di
/
dt
= 100A/µs)
Reverse Recovery Charge
(I
S
= -30A,
di
/
dt
= 100A/µs)
Peak Recovery Current
(I
S
= -30A,
di
/
dt
= 100A/µs)
Characteristic
Junction to Case
Junction to Ambient
375
860
2.0
9.0
15
28
TYP
MAX
Q
rr
I
RRM
µC
Amps
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
UNIT
°C/W
0.14
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.16
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
4 Starting T
j
= +25°C, L = 7.11mH, R
G
= 25Ω, Peak I
L
= 30A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
IS
≤
-
30A
di
/
dt
≤
700A/µs
VR
≤
1200
TJ
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.14
0.9
0.12
0.10
0.08
0.06
0.3
0.04
0.02
0
0.1
0.05
10
-5
10
-4
SINGLE PULSE
0.7
0.5
Note:
PDM
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θJC
+ TC
050-7123 Rev B
12-2003
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
ADPOW [ ADVANCED POWER TECHNOLOGY ]
