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APT11GP60K 参数 Datasheet PDF下载

APT11GP60K图片预览
型号: APT11GP60K
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS 7 IGBT [POWER MOS 7 IGBT]
分类和应用: 晶体晶体管功率控制双极性晶体管局域网
文件页数/大小: 6 页 / 169 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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TYPICAL PERFORMANCE CURVES
40
35
I
C
, COLLECTOR CURRENT (A)
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
40
35
I
C
, COLLECTOR CURRENT (A)
APT11GP60K_SA
VGE = 10V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
30
25
20
T
C
=125°C
15
10
5
0
0
1
2
3
4
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
250µs PULSE TEST
<0.5 % DUTY CYCLE
30
25
20
15
10
5
0
T
C
=-55°C
T
C
=25°C
T
C
=-55°C
T
C
=25°C
T
C
=125°C
0
1
2
3
4
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
I
C
= 11A
T
J
= 25°C
FIGURE 1, Output Characteristics(V
GE
= 15V)
80
70
I
C
, COLLECTOR CURRENT (A)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (V
GE
= 10V)
16
14
12
10
8
6
4
2
0
0
5
10
15
20
25 30
GATE CHARGE (nC)
FIGURE 4, Gate Charge
35
40
V
CE
= 120V
V
CE
= 300V
V
CE
= 480V
60
50
40
30
20
10
0
0
TJ = -55°C
TJ = 25°C
TJ = 125°C
2
4
6
8
10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5
3.0
2.5
I
C
=
22A
3.0
2.5
I
C
=
11A
2.0
1.5
1.0
0.5
I
C
=
5.5A
I
C
=
22A
I
C
=
11A
2.0
1.5
1.0
0.5
0
I
C
=
5.5A
8
10
12
14
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
6
-25
0
25
50
75
100 125
T
J
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
60
0
-50
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
I
C,
DC COLLECTOR CURRENT(A)
50
40
30
20
10
0
-50
1.05
1.00
0.95
050-7419
-25
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90
-50
-25
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
Rev B
6-2004