DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Symbol
I
S
I
SM
V
SD
dv
/
dt
APT11058JFLL
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 550V
I
D
= 18A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 550V
I
D
= 18A @ 25°C
6
INDUCTIVE SWITCHING @ 25°C
V
DD
= 733V, V
GS
= 15V
INDUCTIVE SWITCHING @ 125°C
V
DD
= 733V V
GS
= 15V
I
D
= 18A, R
G
= 5Ω
I
D
= 18A, R
G
= 5Ω
R
G
= 0.6Ω
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
MIN
TYP
MAX
UNIT
pF
4135
680
120
160
20
105
16
8
40
12
700
210
1450
270
MIN
TYP
MAX
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
1
2
dt
6
nC
ns
µ
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
V/ns
ns
µC
Amps
18
72
1.3
18
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
MIN
(Body Diode)
(V
GS
= 0V, I
S
= -18A)
5
dv
/
t
rr
Q
rr
I
RRM
Reverse Recovery Time
(I
S
= -18A,
di
/
dt
= 100A/µs)
Reverse Recovery Charge
(I
S
= -18A,
di
/
dt
= 100A/µs)
Peak Recovery Current
(I
S
= -18A,
di
/
dt
= 100A/µs)
Characteristic
Junction to Case
Junction to Ambient
300
600
1.7
4.47
11.4
16.4
TYP
MAX
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
UNIT
°C/W
0.27
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T
j
= +25°C, L = 15.43mH, R
G
= 25Ω, Peak I
L
= 18A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
IS
≤
-
ID
18A
di
/
dt
≤
700A/µs
VR
≤
VDSS TJ
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
0.25
0.20
0.15
0.10
0.05
0
0.9
0.7
0.5
Note:
PDM
t1
t2
4-2004
0.3
050-7183 Rev A
0.1
0.05
10
-5
10
-4
SINGLE PULSE
Peak TJ = PDM x Z
θJC
+ TC
Duty Factor D = t1/t2
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
ADPOW [ ADVANCED POWER TECHNOLOGY ]
