80
I
D
, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
20,000
10,000
APT11058B2FLL_LFLL
Ciss
10
5
C, CAPACITANCE (pF)
100µS
1,000
Coss
1mS
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
10mS
100
Crss
I
D
= 20A
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
10
100
1100
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
.1
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
10
12
VDS= 220V
TJ =+150°C
TJ =+25°C
10
8
VDS= 550V
VDS= 880V
4
40
80
120
160
200
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
120
100
t
d(off)
0
0
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
70
60
50
t
f
V
DD
G
1
t
d(on)
and t
d(off)
(ns)
80
60
40
20
V
DD
G
= 733V
R
= 5Ω
t
r
and t
f
(ns)
T = 125°C
J
40
30
20
10
= 733V
L = 100µH
R
= 5Ω
T = 125°C
J
L = 100µH
t
r
t
d(on)
0
0
15
20
25
30
35
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
DD
G
5
10
15
20
25
30
35
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
0
0
5
10
2500
V
= 733V
R
= 5Ω
SWITCHING ENERGY (µJ)
2000
SWITCHING ENERGY (µJ)
T = 125°C
J
L = 100µH
E
ON
includes
diode reverse recovery.
2000
E
on
1500
E
off
1000
V
I
DD
1500
E
on
1000
= 733V
4-2004
D
J
= 20A
500
050-7181 Rev A
E
off
500
T = 125°C
L = 100µH
E
ON
includes
15
20
25
30
35
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
diode reverse recovery.
0
5
ADPOW [ ADVANCED POWER TECHNOLOGY ]
