欢迎访问ic37.com |
会员登录 免费注册
发布采购

APT10M25 参数 Datasheet PDF下载

APT10M25图片预览
型号: APT10M25
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS V是新一代高压N沟道增强型功率MOSFET 。 [Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.]
分类和应用: 高压
文件页数/大小: 4 页 / 73 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
 浏览型号APT10M25的Datasheet PDF文件第1页浏览型号APT10M25的Datasheet PDF文件第3页浏览型号APT10M25的Datasheet PDF文件第4页  
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT10M25BVFR
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 1.6Ω
MIN
TYP
MAX
UNIT
pF
4300
1600
650
150
28
75
13
22
40
10
5160
2240
975
225
42
115
26
44
60
20
ns
nC
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
dv
/
dt
Characteristic / Test Conditions
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
1
2
5
5
MIN
TYP
MAX
UNIT
Amps
Volts
V/ns
ns
µC
Amps
(Body Diode)
(Body Diode)
75
300
1.3
5
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
(V
GS
= 0V, I
S
= -I
D
[Cont.])
6
Peak Diode Recovery
dv
/
dt
t
rr
Q
rr
I
RRM
Reverse Recovery Time
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
200
300
0.5
1.1
10
14
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.42
40
4
Starting T = +25°C, L = 0.53mH, R = 25Ω, Peak I = 75A
j
G
L
5
The maximum current is limited by lead temperature.
1
Repetitive Rating: Pulse width limited by maximum T
j
2
Pulse Test: Pulse width < 380
µS,
Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
6
I
-I [Cont.],
di
/
= 100A/µs, V = 50V, T
150°C, R = 2.0Ω
S
D
R
j
G
dt
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
Note:
PDM
t1
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x Z
θJC
+ TC
0.1
0.05
0.01
0.005
050-5605 Rev B
0.001
10
-5
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
-4